V8PM12

High Current Density Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES •Verylowprofile-typicalheightof1.1mm •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable -Automotiveorderingcode;baseP/

V8PM12

High Current Density Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

V8PM12_V01

High Current Density Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES •Verylowprofile-typicalheightof1.1mm •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable -Automotiveorderingcode;baseP/

V8PM12HM3

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

V8PM12HM3

Trench MOS Schottky technology

V8PM12HM3_A/H

肖特基二极管与整流器 8A, 120V, SMPC, TRENCH SKY RECT.;

V8PM12-M3

Trench MOS Schottky technology

V8PM12-M3

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

V8PM12-M3/V8PM12HM3

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.53 V at IF = 4 A; Very low profile - typical height of 1.1 mm\n Ideal for automated placement\n Trench MOS Schottky technology\n\n \n;

V8PM12-M3_15

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier