Dual Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: For definitions of compliance please see www.vishay.co

文件：90.66 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

Dual Trench MOS Barrier Schottky Rectifier

文件：123.04 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.41 V at IF = 3 A

分立

Vishay

威世科技

Dual Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: For definitions of compliance please see www.vishay.co

文件：90.66 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

Dual Trench MOS Barrier Schottky Rectifier

文件：116.08 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

Dual Trench MOS Barrier Schottky Rectifier

文件：124.13 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

Dual Trench MOS Barrier Schottky Rectifier

文件：123.04 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

Package：TO-252-3，DPak（2 引线 + 接片），SC-63；包装：散装 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：DIODE SCHOTTKY 6A 60V DPAK

Vishay General Semiconductor - Diodes Division