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V6P22C

High Current Density Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

VishayVishay Siliconix

威世科技威世科技半导体

V6P22CHM3SLASHH

High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.61 V at IF = 1.5 A

•Verylowprofile-typicalheightof1.1mm •Idealforautomatedplacement •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiency •MeetsMSLlevel1,perJ-STD-020,LF maximumpeakof260°C •AEC-Q101qualifiedavailable -Automotiveorderingc

VishayVishay Siliconix

威世科技威世科技半导体

V6P22CHM3SLASHI

High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.61 V at IF = 1.5 A

•Verylowprofile-typicalheightof1.1mm •Idealforautomatedplacement •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiency •MeetsMSLlevel1,perJ-STD-020,LF maximumpeakof260°C •AEC-Q101qualifiedavailable -Automotiveorderingc

VishayVishay Siliconix

威世科技威世科技半导体

V6P22C-M3SLASHH

High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.61 V at IF = 1.5 A

•Verylowprofile-typicalheightof1.1mm •Idealforautomatedplacement •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiency •MeetsMSLlevel1,perJ-STD-020,LF maximumpeakof260°C •AEC-Q101qualifiedavailable -Automotiveorderingc

VishayVishay Siliconix

威世科技威世科技半导体

V6P22C-M3SLASHI

High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.61 V at IF = 1.5 A

•Verylowprofile-typicalheightof1.1mm •Idealforautomatedplacement •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiency •MeetsMSLlevel1,perJ-STD-020,LF maximumpeakof260°C •AEC-Q101qualifiedavailable -Automotiveorderingc

VishayVishay Siliconix

威世科技威世科技半导体

V6P22CHM3/H

High Current Density Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

VishayVishay Siliconix

威世科技威世科技半导体

V6P22CHM3/I

High Current Density Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

VishayVishay Siliconix

威世科技威世科技半导体

V6P22C-M3/H

High Current Density Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

VishayVishay Siliconix

威世科技威世科技半导体

V6P22C-M3/I

High Current Density Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

VishayVishay Siliconix

威世科技威世科技半导体

V6P22CHM3/I

Package:TO-277,3-PowerDFN;包装:管件 类别:分立半导体产品 二极管 - 整流器 - 阵列 描述:6A, 200V, SMPC TRENCH SKY RECT.

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

供应商型号品牌批号封装库存备注价格
24+
N/A
56000
一级代理-主营优势-实惠价格-不悔选择
询价
Vishay General Semiconductor -
25+
TO-277 3-PowerDFN
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
更多V6P22C供应商 更新时间2025-5-24 11:06:00