HIGH PERFORMANCE 2.5 VOLT 256 Mbit DDR SDRAM

Description\nThe V58C2256(804/404/164)S is a four bank DDR DRAM organized as 4 banks x 8Mbit x 8 (804), 4 banks x 4Mbit x 16 (164), or 4 banks x 16Mbit x 4 (404). The V58C2256(804/404/164)S achieves high speed data transfer rates by employing a chip architecture that prefetches multiple bits and the ■ High speed data transfer rates with system frequency up to 166 MHz\n■ Data Mask for Write Control\n■ Four Banks controlled by BA0 & BA1\n■ Programmable CAS Latency: 2, 2.5\n■ Programmable Wrap Sequence: Sequential or Interleave\n■ Programmable Burst Length:\n   2, 4, 8 for Sequential Type\n   2, 4;

Mosel

茂矽电子

HIGH PERFORMANCE 2.5 VOLT 256 Mbit DDR SDRAM

文件：814.81 Kbytes 页数：61 Pages

MOSEL

茂矽电子

DDR SDRAM

ProMOS

茂德科技

SMD

KET

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