HIGH PERFORMANCE 225/200/166/143 MHz 3.3 VOLT 4M X 16 SYNCHRONOUS DRAM 4 BANKS X 1Mbit X 16

Description The V54C365164VD(L) is a four bank Synchronous DRAM organized as 4 banks x 1Mbit x 16. The V54C365164VD(L) achieves high speed data transfer rates up to 225 MHz by employing a chip architecture that prefetches multiple bits and then synchronizes the output data to a system clock. All

文件：946.76 Kbytes 页数：56 Pages

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HIGH PERFORMANCE 225/200/166/143 MHz 3.3 VOLT 4M X 16 SYNCHRONOUS DRAM 4 BANKS X 1Mbit X 16

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茂矽电子

3.3V 4M x 16 SDRAM 4 banks x 1Mbit x 16

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HIGH PERFORMANCE 166/143/125 MHz 3.3 VOLT 4M X 16 SYNCHRONOUS DRAM 4 BANKS X 1Mbit X 16

Description The V54C365164VC is a four bank Synchronous DRAM organized as 4 banks x 1Mbit x 16. The V54C365164VC achieves high speed data transfer rates up to 166 MHz by employing a chip architecture that prefetches multiple bits and then synchronizes the output data to a system clock All of the

文件：1.57087 Mbytes 页数：54 Pages

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茂矽电子

HIGH PERFORMANCE 225/200/166/143 MHz 3.3 VOLT 4M X 16 SYNCHRONOUS DRAM 4 BANKS X 1Mbit X 16

Description The V54C365164VD(L) is a four bank Synchronous DRAM organized as 4 banks x 1Mbit x 16. The V54C365164VD(L) achieves high speed data transfer rates up to 225 MHz by employing a chip architecture that prefetches multiple bits and then synchronizes the output data to a system clock. All

文件：946.76 Kbytes 页数：56 Pages

MOSEL

茂矽电子

HIGH PERFORMANCE 166/143/125 MHz 3.3 VOLT 4M X 16 SYNCHRONOUS DRAM 4 BANKS X 1Mbit X 16

Description The V54C365164VC is a four bank Synchronous DRAM organized as 4 banks x 1Mbit x 16. The V54C365164VC achieves high speed data transfer rates up to 166 MHz by employing a chip architecture that prefetches multiple bits and then synchronizes the output data to a system clock All of the

文件：1.57087 Mbytes 页数：54 Pages

MOSEL

茂矽电子