V54C365164VC中文资料茂矽电子数据手册PDF规格书

描述 Description

The V54C365164VC is a four bank Synchronous DRAM organized as 4 banks x 1Mbit x 16. The V54C365164VC achieves high speed data transfer rates up to 166 MHz by employing a chip architecture that prefetches multiple bits and then synchronizes the output data to a system clock All of the control, address, data input and output circuits are synchronized with the positive edge of an externally supplied clock.

特性 Features

■ 4 banks x 1Mbit x 16 organization

■ High speed data transfer rates up to 166 MHz

■ Full Synchronous Dynamic RAM, with all signals referenced to clock rising edge

■ Single Pulsed RAS Interface

■ Data Mask for byte Control

■ Four Banks controlled by BA0 & BA1

■ Programmable CAS Latency: 1, 2, & 3

■ Programmable Wrap Sequence: Sequential or Interleave

■ Programmable Burst Length: 1, 2, 4, 8 and full page for Sequential Type 1, 2, 4, 8 for Interleave Type

■ Multiple Burst Read with Single Write Operation

■ Automatic and Controlled Precharge Command

■ Random Column Address every CLK (1-N Rule)

■ Suspend Mode and Power Down Mode

■ Auto Refresh and Self Refresh

■ Refresh Interval: 4096 cycles/64 ms

■ Available in 54 Pin 400 mil TSOP-II

■ LVTTL Interface

■ Single +3.3 V ±0.3 V Power Supply