| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Low thermal resistance • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 文件：1.12964 Mbytes 页数：6 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Low thermal resistance • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 文件：1.12964 Mbytes 页数：6 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICA 文件：136.72 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICA 文件：136.72 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.36 V at IF = 5 A • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 文件：136.08 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 文件：217.27 Kbytes 页数：6 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 文件：217.27 Kbytes 页数：6 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in 文件：76.21 Kbytes 页数：4 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in 文件：76.21 Kbytes 页数：4 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in 文件：141.48 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay |
详细参数
- 型号：
V401
- 功能描述：
DIODE 40A 100V SCHOTTKY TO220-3
- RoHS：
是
- 类别：
分离式半导体产品 >> 二极管，整流器 - 阵列
- 系列：
-
- 其它有关文件：
STTH10LCD06C View All Specifications
- 标准包装：
1,000
- 系列：
- 电压 - 在 If
- 时为正向(Vf)（最大）：
2V @ 5A 电流 - 在 Vr
- 时反向漏电：
1µA @ 600V 电流 -
- 平均整流(Io)（每个二极管）：
5A 电压
- -(Vr)（最大）：
600V
- 反向恢复时间(trr)：
50ns
- 二极管类型：
标准
- 速度：
快速恢复 = 200mA（Io）
- 二极管配置：
1 对共阴极
- 安装类型：
表面贴装
- 封装/外壳：
TO-263-3，D²Pak（2 引线+接片），TO-263AB
- 供应商设备封装：
D2PAK
- 包装：
带卷(TR)
- 产品目录页面：
1553(CN2011-ZH PDF)
- 其它名称：
497-10107-2
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY |
25+ |
TO-220 |
1675 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
VISHAY/威世 |
22+ |
TO220AB |
6000 |
十年配单,只做原装 |
询价 | ||
VISHAY/威世 |
24+ |
TO220 |
990000 |
明嘉莱只做原装正品现货 |
询价 | ||
Vishay |
25+ |
TOTO-220AB |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
询价 | ||
VISHAY/威世 |
25+ |
TO220 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
询价 | ||
VIS |
24+ |
1000 |
询价 | ||||
VISHAY |
17+ |
TO220 |
6200 |
100%原装正品现货 |
询价 | ||
VISHAY |
25+ |
TO220 |
90 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
VISHAY |
24+ |
TO-220AB |
3000 |
全新原装环保现货 |
询价 | ||
VISHAY |
1651+ |
TO-220 |
8500 |
只做原装进口,假一罚十 |
询价 |
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