Ultra Low Power 1-Bit 32 kHz RTC

文件：709.49 Kbytes 页数：17 Pages

EMMICRO

Ultra Low Power 1-Bit 32 kHz RTC

文件：709.49 Kbytes 页数：17 Pages

EMMICRO

Ultra Low Power 1-Bit 32 kHz RTC

文件：470.72 Kbytes 页数：14 Pages

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Ultra Low Power 1-Bit 32kHz RTC, 0.4uA standby current, up to +125°C.

The V3020 is a low power CMOS real time clock. Data is transmitted serially as 4 address bits and 8 data bits, over one line of a standard parallel data bus. The device is accessed by chip select (/CS) with read and write control timing provided by either /RD and /WR pulse (Intel CPU) or /DS with ad ·Supply current typically 390nA at 3V\n·50ns access time with 50pF load capacitance\n·Fully operational from 1.2V to 5.5V\n·No busy states or danger of a clock update while accessing\n·Serial communication on one line of a standard parallel data bus or over a conventional 3 wire serial interface\n·I;

EM Microelectronic

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106

文件：216.21 Kbytes 页数：6 Pages

VishayVishay Siliconix

威世

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106

文件：216.21 Kbytes 页数：6 Pages

VishayVishay Siliconix

威世

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology Gen 2 • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-2

文件：207.43 Kbytes 页数：6 Pages

VishayVishay Siliconix

威世

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology Gen 2 • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-2

文件：207.43 Kbytes 页数：6 Pages

VishayVishay Siliconix

威世

Dual High Voltage Trench MOS Barrier Schottky Rectifier

文件：157.99 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.526 V at IF = 5 A

文件：158 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世