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V20120SG

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A

UltraLowVF=0.54VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,perJESD22-B

VishayVishay Siliconix

威世科技威世科技半导体

V20120SG

High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderbathtemperature275°Cmax.10s, perJESD22-B106 •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATION

VishayVishay Siliconix

威世科技威世科技半导体

V20120SG

High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半导体

V20120SG

High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半导体

V20120SG

High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半导体

V20120SG

High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半导体

V20120SG_V01

High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderbathtemperature275°Cmax.10s, perJESD22-B106 •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATION

VishayVishay Siliconix

威世科技威世科技半导体

V20120SG-E3

High Voltage Trench MOS Barrier Schottky Rectifier

UltraLowVF=0.54VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,perJESD22-B

VishayVishay Siliconix

威世科技威世科技半导体

V20120SG-E3/4W

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A

UltraLowVF=0.54VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,perJESD22-B

VishayVishay Siliconix

威世科技威世科技半导体

V20120SG-E3SLASH4W

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A

UltraLowVF=0.54VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,perJESD22-B

VishayVishay Siliconix

威世科技威世科技半导体

详细参数

  • 型号:

    V20120SG

  • 制造商:

    VISHAY

  • 制造商全称:

    Vishay Siliconix

  • 功能描述:

    High-Voltage Trench MOS Barrier Schottky Rectifier

供应商型号品牌批号封装库存备注价格
VISHAY
23+
TO220
8890
价格优势/原装现货/客户至上/欢迎广大客户来电查询
询价
VISHAY原装
25+23+
TO-220
23548
绝对原装正品全新进口深圳现货
询价
LITEON/OCIC
23+
SMD
69820
终端可以免费供样,支持BOM配单!
询价
VISHAY原装
24+
TO-220
30980
原装现货/放心购买
询价
VISHAY/威世
2022+
TO-220
12888
原厂代理 终端免费提供样品
询价
VISHAY/威世
23+
TO-220
6000
原装正品,支持实单
询价
VISHAY
TO220
53650
一级代理 原装正品假一罚十价格优势长期供货
询价
VISHAY/威世
22+
TO-220
25000
只做原装进口现货,专注配单
询价
Vishay/GeneralSemiconduc
24+
TO-220AB
1326
询价
VISHAY
1809+
TO-220
3675
就找我吧!--邀您体验愉快问购元件!
询价
更多V20120SG供应商 更新时间2025-7-24 14:03:00