| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
V20120SG | High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A Ultra Low VF= 0.54 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s,per JESD 22-B 文件：166.5 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay | |
V20120SG | High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION 文件：141.01 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay | |
V20120SG | High-Voltage Trench MOS Barrier Schottky Rectifier 文件：162.45 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay | |
V20120SG | High-Voltage Trench MOS Barrier Schottky Rectifier 文件：160.88 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay | |
V20120SG | High-Voltage Trench MOS Barrier Schottky Rectifier 文件：142.26 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay | |
V20120SG | High-Voltage Trench MOS Barrier Schottky Rectifier 文件：164.09 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay | |
High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION 文件：141.01 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay | ||
High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF= 0.54 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s,per JESD 22-B 文件：161.39 Kbytes 页数：6 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A Ultra Low VF= 0.54 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s,per JESD 22-B 文件：166.5 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A Ultra Low VF= 0.54 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s,per JESD 22-B 文件：166.5 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay |
详细参数
- 型号：
V20120SG
- 制造商：
VISHAY
- 制造商全称：
Vishay Siliconix
- 功能描述：
High-Voltage Trench MOS Barrier Schottky Rectifier
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY原装 |
25+23+ |
TO-220 |
23548 |
绝对原装正品全新进口深圳现货 |
询价 | ||
LITEON/OCIC |
23+ |
SMD |
69820 |
终端可以免费供样,支持BOM配单! |
询价 | ||
VISHAY原装 |
24+ |
TO-220 |
30980 |
原装现货/放心购买 |
询价 | ||
VISHAY/威世 |
2022+ |
TO-220 |
12888 |
原厂代理 终端免费提供样品 |
询价 | ||
VISHAY |
TO220 |
53650 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | |||
Vishay/GeneralSemiconduc |
24+ |
TO-220AB |
1326 |
询价 | |||
VISHAY |
25+ |
TO-220 |
3675 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
VISHAY/威世 |
23+ |
TO-220AB |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 | ||
VISHAY/威世 |
20+ |
T0-220 |
2000 |
现货很近!原厂很远!只做原装 |
询价 | ||
24+ |
N/A |
60000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 |
相关规格书
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- XC6124A333ER-G
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- V24C24H50BG3
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- V24A15M400BG
- V24A15M400BG3
