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V20120SG-E3

High Voltage Trench MOS Barrier Schottky Rectifier

Ultra Low VF= 0.54 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s,per JESD 22-B

文件:161.39 Kbytes 页数:6 Pages

VishayVishay Siliconix

威世

V20120SG-E3

High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A

Trench MOS Schottky technology\nLow forward voltage drop, low power losses\nHigh efficiency operation;

Vishay

威世

V20120SG-E3/4W

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A

Ultra Low VF= 0.54 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s,per JESD 22-B

文件:166.5 Kbytes 页数:5 Pages

VishayVishay Siliconix

威世

V20120SG-E3SLASH4W

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A

Ultra Low VF= 0.54 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s,per JESD 22-B

文件:166.5 Kbytes 页数:5 Pages

VishayVishay Siliconix

威世

V20120SG-E3/4W

High-Voltage Trench MOS Barrier Schottky Rectifier

文件:162.45 Kbytes 页数:5 Pages

VishayVishay Siliconix

威世

V20120SG-E3-4W

High-Voltage Trench MOS Barrier Schottky Rectifier

文件:160.88 Kbytes 页数:5 Pages

VishayVishay Siliconix

威世

V20120SG-E3SLASH4W

High-Voltage Trench MOS Barrier Schottky Rectifier

文件:162.45 Kbytes 页数:5 Pages

VishayVishay Siliconix

威世

V20120SG-E3/VF20120SG-E3/VB20120SG-E3/VI20120SG-E3

High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A

Trench MOS Schottky technology\n Low forward voltage drop, low power losses\n High efficiency operation\n\n ;

Vishay

威世

V20120SG-E3/4W

Package:TO-220-3;包装:管件 类别:分立半导体产品 二极管 - 整流器 - 单 描述:DIODE SCHOTTKY 120V 20A TO220AB

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

详细参数

  • 型号:

    V20120SG-E3

  • 功能描述:

    肖特基二极管与整流器 20 Amp 120 Volt Single TrenchMOS

  • RoHS:

  • 制造商:

    Skyworks Solutions, Inc.

  • 产品:

    Schottky Diodes

  • 峰值反向电压:

    2 V

  • 正向连续电流:

    50 mA

  • 配置:

    Crossover Quad

  • 正向电压下降:

    370 mV

  • 最大功率耗散:

    75 mW

  • 工作温度范围:

    - 65 C to + 150 C

  • 安装风格:

    SMD/SMT

  • 封装/箱体:

    SOT-143

  • 封装:

    Reel

供应商型号品牌批号封装库存备注价格
VIS
22+
TO-220AB
6000
十年配单,只做原装
询价
VIS
25+
TO-TO-220AB
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
Vishay/GeneralSemiconduc
24+
TO-220AB
1326
询价
VISHAY
25+
TO-220
3675
就找我吧!--邀您体验愉快问购元件!
询价
VISHAY/威世
20+
T0-220
2000
现货很近!原厂很远!只做原装
询价
24+
N/A
60000
一级代理-主营优势-实惠价格-不悔选择
询价
VISHAY/威世
23+
TO-220AB
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
询价
FERRAZ/罗兰熔断器
23+
标准封装
5000
原厂授权一级代理 IGBT模块 可控硅 晶闸管 熔断器质保
询价
VISHAY
23+
TO-220
8650
受权代理!全新原装现货特价热卖!
询价
VISHAY/威世
23+
TO220
50000
全新原装正品现货,支持订货
询价
更多V20120SG-E3供应商 更新时间2025-10-11 14:02:00