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V20120C

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderdip275°Cmax.10s,perJESD22-B106 •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATIONS Forusein

VishayVishay Siliconix

威世科技

Vishay

V20120C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A

FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderdip260°C,40s(forTO-220AB,ITO-220ABandTO-262AApackage) •Componentinacco

VishayVishay Siliconix

威世科技

Vishay

V20120C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技

Vishay

V20120C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技

Vishay

V20120C_V01

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderdip275°Cmax.10s,perJESD22-B106 •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATIONS Forusein

VishayVishay Siliconix

威世科技

Vishay

V20120C-E3

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderdip260°C,40s(forTO-220AB,ITO-220ABandTO-262AApackage) •Componentinacco

VishayVishay Siliconix

威世科技

Vishay

V20120C-E3/4W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A

FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderdip260°C,40s(forTO-220AB,ITO-220ABandTO-262AApackage) •Componentinacco

VishayVishay Siliconix

威世科技

Vishay

V20120C_11

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技

Vishay

V20120C_12

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技

Vishay

V20120C_15

Dual High Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技

Vishay

V20120C-E3/4W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技

Vishay

V20120C-E3_15

High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技

Vishay

V20120CHM3-4W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技

Vishay

V20120C-M3-4W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技

Vishay

V20120C-E3/4W

包装:管件 封装/外壳:TO-220-3 类别:分立半导体产品 二极管 - 整流器 - 阵列 描述:DIODE ARRAY SCHOTTKY 120V TO220

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

V20120CHM3/4W

包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 封装/外壳:TO-220-3 类别:分立半导体产品 二极管 - 整流器 - 阵列 描述:DIODE SCHOTTKY 20A 120V TO-220AB

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

V20120C-M3/4W

包装:卷带(TR) 封装/外壳:TO-220-3 类别:分立半导体产品 二极管 - 整流器 - 阵列 描述:DIODE SCHOTTKY 20A 120V TO-220AB

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

AOK20120XSD

1200VαSiCSiliconCarbideSchottkyBarrierDiode

Features •ProprietaryαSiCSchottkyBarrierDiodetechnology •Negligiblereverserecoverycurrent •Maximumoperatingjunctiontemperatureof175°C •Improvedswitchinglossesvs.Sibipolardiodes •Positivetemperaturecoefficientforeaseofparalleling Applications RenewableIndustr

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOSMD

CBD20120LCT

LOWVFSCHOTTKYRECTIFIER

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT

CBD20120UFCT

LOWVFSCHOTTKYRECTIFIER

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT

详细参数

  • 型号:

    V20120C

  • 制造商:

    VISHAY

  • 制造商全称:

    Vishay Siliconix

  • 功能描述:

    Dual High-Voltage Trench MOS Barrier Schottky Rectifier

供应商型号品牌批号封装库存备注价格
VISHAY
23+
TO-220
8600
全新原装现货
询价
VISHAY
2017+
TO220
21546
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票
询价
VISHAY
09+
TO220
3
散新现货
询价
23+
N/A
85500
正品授权货源可靠
询价
VISHAY
23+
TO-TO-220
33500
全新原装真实库存含13点增值税票!
询价
VISHAY
2020+
TO-220
8000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
VISHAY
21+
TO-220
6000
绝对原裝现货
询价
VISHAY
20+
TO220
36500
原装现货/放心购买
询价
VISHAY/威世
22+
TO-220
5623
只做原装正品现货!或订货假一赔十!
询价
VISHAY/威世
23+
TO-220
90000
只做原厂渠道价格优势可提供技术支持
询价
更多V20120C供应商 更新时间2024-4-27 14:02:00