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V20120C

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderdip275°Cmax.10s,perJESD22-B106 •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATIONS Forusein

VishayVishay Siliconix

威世科技威世科技半导体

V20120C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A

FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderdip260°C,40s(forTO-220AB,ITO-220ABandTO-262AApackage) •Componentinacco

VishayVishay Siliconix

威世科技威世科技半导体

V20120C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半导体

V20120C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半导体

V20120C_V01

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderdip275°Cmax.10s,perJESD22-B106 •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATIONS Forusein

VishayVishay Siliconix

威世科技威世科技半导体

V20120C-E3

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderdip260°C,40s(forTO-220AB,ITO-220ABandTO-262AApackage) •Componentinacco

VishayVishay Siliconix

威世科技威世科技半导体

V20120C-E3/4W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A

FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderdip260°C,40s(forTO-220AB,ITO-220ABandTO-262AApackage) •Componentinacco

VishayVishay Siliconix

威世科技威世科技半导体

V20120C-E3SLASH4W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A

FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderdip260°C,40s(forTO-220AB,ITO-220ABandTO-262AApackage) •Componentinacco

VishayVishay Siliconix

威世科技威世科技半导体

V20120C_11

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半导体

V20120C_12

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半导体

详细参数

  • 型号:

    V20120C

  • 制造商:

    VISHAY

  • 制造商全称:

    Vishay Siliconix

  • 功能描述:

    Dual High-Voltage Trench MOS Barrier Schottky Rectifier

供应商型号品牌批号封装库存备注价格
VISHAY
23+
TO-220
8600
全新原装现货
询价
VISHAY
24+
TO-220
8000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
VISHAY原装
24+
TO-220
30980
原装现货/放心购买
询价
VISHAY/威世
23+
TO-220
50000
全新原装正品现货,支持订货
询价
VISHAY/威世
2022+
TO-220
12888
原厂代理 终端免费提供样品
询价
VISHAY
22+
TO-220
8900
英瑞芯只做原装正品!!!
询价
TH/韩国太虹
2048+
TO-220
9851
只做原装正品现货!或订货假一赔十!
询价
VISHAY/威世
23+
TO-220
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
询价
VISHAY/威世
22+
TO220
12245
现货,原厂原装假一罚十!
询价
VISHAY/威世
23+
TO-220
6000
原装正品,支持实单
询价
更多V20120C供应商 更新时间2025-5-4 14:02:00