| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
V20100S | High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.446 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2 文件：168.62 Kbytes 页数：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
V20100S | High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL 文件：143.58 Kbytes 页数：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
V20100S | High-Voltage Trench MOS Barrier Schottky Rectifier 文件：163.71 Kbytes 页数：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
V20100S | High-Voltage Trench MOS Barrier Schottky Rectifier 文件：145.19 Kbytes 页数：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL 文件：143.58 Kbytes 页数：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JES 文件：157.77 Kbytes 页数：6 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 文件：215.28 Kbytes 页数：6 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.446 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2 文件：168.62 Kbytes 页数：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 文件：215.28 Kbytes 页数：6 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.446 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2 文件：168.62 Kbytes 页数：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY |
详细参数
- 型号：
V20100S
- 制造商：
VISHAY
- 制造商全称：
Vishay Siliconix
- 功能描述：
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.446 V at IF = 5 A
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
中性 |
23+ |
TO220-3 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
VISHAY/威世 |
2022+ |
TO-220 |
12888 |
原厂代理 终端免费提供样品 |
询价 | ||
VISHAY/威世 |
24+ |
TO220 |
22055 |
郑重承诺只做原装进口现货 |
询价 | ||
22+ |
TO220-3 |
20000 |
只做原装 |
询价 | |||
Vishay/GeneralSemiconduc |
24+ |
TO-220AB |
417 |
询价 | |||
VISHAY |
23+ |
TO-220 |
20000 |
原装正品,假一罚十 |
询价 | ||
Vishay |
24+ |
NA |
3000 |
进口原装正品优势供应 |
询价 | ||
VISHAY原装 |
25+23+ |
TO-220 |
23083 |
绝对原装正品全新进口深圳现货 |
询价 | ||
VISHAY/威世 |
25+ |
TO-220AB |
30000 |
全新原装现货,价格优势 |
询价 | ||
VISHAY原装 |
24+ |
TO-220 |
30980 |
原装现货/放心购买 |
询价 |
相关规格书
更多- V20100S-E3/4W
- V2010A1
- V2010A3
- V20150C-E3/4W
- V20200C-E3/4W
- V20202G-M3/4W
- V20DL45BP-M3/I
- V20E11P
- V20E140P
- V20E14P
- V20E150PL1B7
- V20E17AUTO
- V20E230P
- V20E250P
- V20E25AUTO
- V20E275
- V20E275PL1B7
- V20E30AUTO
- V20E320P
- V20E320PL4B
- V20E385P
- V20E420
- V20E42AUTO
- V20E460P
- V20E510P
- V20E550P
- V20E625P
- V20PL50-M3/86A
- V20W60C-M3/I
- V20WM100C-M3/I
- V2-1.5-0-SP-SM
- V2109B
- V2110B
- V-21-1C6
- V-21-2C6
- V2-14.0-0-FSP-SM
- V-216-1C6
- V217.630-P
- V21B
- V2-2.5-0-SP-SM
- V220CH8
- V220CH8T
- V220MA4B
- V220RA8
- V225.250-P
相关库存
更多- V20100SG-E3/4W
- V2010A2
- V20120C-E3/4W
- V2017B
- V20202C-M3/4W
- V20212MA08QA
- V20DM120C-M3/I
- V20E130P
- V20E14AUTO
- V20E150P
- V20E175P
- V20E17P
- V20E23P
- V20E250PL2T
- V20E25P
- V20E275P
- V20E300P
- V20E30P
- V20E320PL1T
- V20E35P
- V20E385PL4B
- V20E420P
- V20E440P
- V20E460PL1T1
- V20E510PL1B7
- V20E625
- V20E750P
- V20W
- V20WL45-M3/I
- V2-1.0-0-SP-SM
- V2-10.0-0-FSP-SM
- V2-11.0-0-FSP-SM
- V-211-1C6
- V2-12.0-0-FSP-SM
- V2-13.0-0-FSP-SM
- V-215-1C6
- V217.250-P
- V218.250-P
- V2-2.0-0-SP-SM
- V2-20.0-0-FSP-SM
- V220CH8S
- V220MA2A
- V220MT4B
- V220ZA05P
- V225007-P
