| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
V10150S | High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package) • Compo 文件：166.33 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay | |
V10150S | High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION 文件：149.51 Kbytes 页数：4 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay | |
V10150S | High-Voltage Trench MOS Barrier Schottky Rectifier 文件：130.53 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay | |
V10150S | High-Voltage Trench MOS Barrier Schottky Rectifier 文件：168.07 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay | |
V10150S | High Voltage Trench MOS Barrier Schottky Rectifier 文件：156.49 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay | |
High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION 文件：149.51 Kbytes 页数：4 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay | ||
High efficiency operation FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package) • Compo 文件：167.09 Kbytes 页数：6 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package) • Compo 文件：166.33 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package) • Compo 文件：166.33 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：130.53 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay |
详细参数
- 型号：
V10150S
- 制造商：
VISHAY
- 制造商全称：
Vishay Siliconix
- 功能描述：
High-Voltage Trench MOS Barrier Schottky Rectifier
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
23+ |
TO-220AC |
69820 |
终端可以免费供样,支持BOM配单! |
询价 | ||
VISHAY/威世 |
2022+ |
TO-220 |
12888 |
原厂代理 终端免费提供样品 |
询价 | ||
VISHAY |
25+ |
TO-TO-220 |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
询价 | ||
22+ |
TO220 |
20000 |
只做原装 |
询价 | |||
VISHAY |
25+ |
TO-220 |
3675 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
VISHAT |
21+ |
原厂封装 |
1975 |
询价 | |||
VISHAY/威世 |
23+ |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 | |||
VISHAT |
50 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||||
VISHAY/美国威世公司 |
23+ |
TO-220AB |
5000 |
公司只做原装,可配单 |
询价 | ||
VISHAY/威世 |
24+ |
NA/ |
4250 |
原厂直销,现货供应,账期支持! |
询价 |
相关规格书
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相关库存
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