High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package) • Compo

文件：166.33 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

High-Voltage Trench MOS Barrier Schottky Rectifier

文件：168.07 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

High-Voltage Trench MOS Barrier Schottky Rectifier

文件：168.07 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package) • Compo

文件：166.33 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

High-Voltage Trench MOS Barrier Schottky Rectifier

文件：168.07 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世