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HMG20N65F

HighEfficiencyforMotorControl.

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HRH20N65ANF

650VN-ChannelPlanarMOSFET

Features RDSON≤0.42Ω@Vgs=10V,Id=10A UltraLowgateCharge(typical73nC) LowCrss(typical12pF) Fastswitchingcapability 100%avalanchetested Improveddv/dtcapability Applications SwitchModePowerSupply(SMPS) UninterruptiblePowerSupply(UPS) PowerFactorCorrection(PFC)(P

SYChangzhou Shunye Electronics Co.,Ltd.

顺烨电子江苏顺烨电子有限公司

HRH20N65ANP

650VN-ChannelPlanarMOSFET

Features RDSON≤0.42Ω@Vgs=10V,Id=10A UltraLowgateCharge(typical73nC) LowCrss(typical12pF) Fastswitchingcapability 100%avalanchetested Improveddv/dtcapability Applications SwitchModePowerSupply(SMPS) UninterruptiblePowerSupply(UPS) PowerFactorCorrection(PFC)(P

SYChangzhou Shunye Electronics Co.,Ltd.

顺烨电子江苏顺烨电子有限公司

HRH20N65ANV

650VN-ChannelPlanarMOSFET

Features RDSON≤0.42Ω@Vgs=10V,Id=10A UltraLowgateCharge(typical73nC) LowCrss(typical12pF) Fastswitchingcapability 100%avalanchetested Improveddv/dtcapability Applications SwitchModePowerSupply(SMPS) UninterruptiblePowerSupply(UPS) PowerFactorCorrection(PFC)(P

SYChangzhou Shunye Electronics Co.,Ltd.

顺烨电子江苏顺烨电子有限公司

HRH20N65ANW

650VN-ChannelPlanarMOSFET

Features RDSON≤0.42Ω@Vgs=10V,Id=10A UltraLowgateCharge(typical73nC) LowCrss(typical12pF) Fastswitchingcapability 100%avalanchetested Improveddv/dtcapability Applications SwitchModePowerSupply(SMPS) UninterruptiblePowerSupply(UPS) PowerFactorCorrection(PFC)(P

SYChangzhou Shunye Electronics Co.,Ltd.

顺烨电子江苏顺烨电子有限公司

HRH20N65ANX

650VN-ChannelPlanarMOSFET

Features RDSON≤0.42Ω@Vgs=10V,Id=10A UltraLowgateCharge(typical73nC) LowCrss(typical12pF) Fastswitchingcapability 100%avalanchetested Improveddv/dtcapability Applications SwitchModePowerSupply(SMPS) UninterruptiblePowerSupply(UPS) PowerFactorCorrection(PFC)(P

SYChangzhou Shunye Electronics Co.,Ltd.

顺烨电子江苏顺烨电子有限公司

ICE20N65

N-ChannelEnhancementModeMOSFET

ICEMOS

Icemos Technology

ICE20N65

N-ChannelEnhancementModeMOSFET

MICROSS

Micross Components

ICE20N65FP

N-ChannelEnhancementModeMOSFET

ICEMOS

Icemos Technology

ICE20N65FP

N-ChannelEnhancementModeMOSFET

MICROSS

Micross Components

技术参数

  • VGES(V):

    ±20

  • IC(A):

    40

  • VCE(SAT)(V)testVGE(V):

    15

  • VCE(SAT)(V)MAX.:

    1.8

  • VGE(th)(V)MIN.:

    2.5

  • VGE(th)(V)MAX.:

    6.5

  • QG(nC)TYP.:

    53.5

  • Turnon/off Time TR(uS)TYP.:

    0.0176

  • Turnon/off Time TF(uS)TYP.:

    0.0824

  • Package:

    TO-220F1

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11200
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更多UTG20N65-S供应商 更新时间2025-7-29 16:00:00