UT3416G-AE3-R技术资料参数供应代理友顺UTC-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
UT3416G-AE3-R	文件：114.31 Kbytes Page：3 Pages	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC UT3416 is advanced N-channel enhancement MOSFET which can provide the designer with the best combination of excellent RDS (ON), low gate charge and low gate voltages as low as 1.8V.When it is used as a load switch or in PWM application, the UTC UT3416 can be considered as an i 文件：114.31 Kbytes 页数：3 Pages	UTC 友顺	UTC
UT3416G-AE3-R	文件：482.77 Kbytes Page：9 Pages	N-Channel 30-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter 文件：482.77 Kbytes 页数：9 Pages	VBSEMI 微碧半导体	VBSEMI
UT3416G-AE3-R	文件：163.27 Kbytes Page：3 Pages	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：163.27 Kbytes 页数：3 Pages	UTC 友顺	UTC
UT3419G	文件：0 bytes Page：0 Pages	SOT-23	UTC/友顺上传：深圳广友电子有限公司	UTC/友顺
UT3N06G	文件：0 bytes Page：0 Pages	SOT-89	UTC/友顺上传：深圳广友电子有限公司	UTC/友顺

更多UT3416G-AE3-R供应商更新时间2025-12-4 14:14:00