N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DESCRIPTION The UT3406 uses advanced trench technology to provide excellent RDS(ON), low gate charge and can be operated at low gate voltages. This device is perfect fit for use as a load switch or in PWM applications. FEATURES * RDS(ON) ≤ 65 mΩ @ VGS=10V, ID=3.6A * RDS(ON) ≤ 105 mΩ @ VGS=4.5V

文件：132.61 Kbytes 页数：3 Pages

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Trench Power MOSFET  (N-CH)

The UT3406 uses advanced trench technology to provide excellent RDS(ON), low gate charge and can be operated at low gate voltages. This device is perfect fit for use as a load switch or in PWM applications. • VDS (V) = 30V \n• I D = 3.6A    (VGS = 10V) \n• RDS(ON) < 65m Ω (VGS = 10V) \n• RDS(ON) < 105mΩ (VGS = 4.5V) \n• Halogen Free;

UTC

友顺

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DESCRIPTION The UT3406 uses advanced trench technology to provide excellent RDS(ON), low gate charge and can be operated at low gate voltages. This device is perfect fit for use as a load switch or in PWM applications. FEATURES * RDS(ON) ≤ 65 mΩ @ VGS=10V, ID=3.6A * RDS(ON) ≤ 105 mΩ @ VGS=4.5V

文件：132.61 Kbytes 页数：3 Pages

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友顺

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

文件：492.09 Kbytes 页数：9 Pages

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N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

文件：492.08 Kbytes 页数：9 Pages

VBSEMI

微碧半导体