UPG2253T6S-E2-A资料datasheet下载批发采购-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
UPG2253T6S-E2-A	文件：258.35 Kbytes Page：14 Pages	丝印：G5Y；Package：QFN；GaAs HJ-FET INTEGRATED CIRCUIT FEATURES • Operating frequency : fopt = 2 400 to 2 500 MHz (2 450 MHz TYP.) • Supply voltage : VDD1, 2, 3 = 3.0 V TYP. • Control voltage : Ven = 3.0 V TYP. • Circuit current : IDD = 95 mA TYP. @ Pin = 0 dBm • Output power : Pout = 19 dBm TYP. @ Pin = 0 dBm • High efficiency : PAE = 28 TYP. @ 文件：258.35 Kbytes 页数：14 Pages	RENESAS 瑞萨	RENESAS
UPG2253T6S-E2-A	文件：557.48 Kbytes Page：11 Pages	RF FRONT-END IC FOR BluetoothTM CLASS 1 文件：557.48 Kbytes 页数：11 Pages	CEL	CEL
UPG2253T6S-E2	文件：258.35 Kbytes Page：14 Pages	GaAs HJ-FET INTEGRATED CIRCUIT FEATURES • Operating frequency : fopt = 2 400 to 2 500 MHz (2 450 MHz TYP.) • Supply voltage : VDD1, 2, 3 = 3.0 V TYP. • Control voltage : Ven = 3.0 V TYP. • Circuit current : IDD = 95 mA TYP. @ Pin = 0 dBm • Output power : Pout = 19 dBm TYP. @ Pin = 0 dBm • High efficiency : PAE = 28 TYP. @ 文件：258.35 Kbytes 页数：14 Pages	RENESAS 瑞萨	RENESAS
UPG2253T6S-E2	文件：557.48 Kbytes Page：11 Pages	RF FRONT-END IC FOR BluetoothTM CLASS 1 文件：557.48 Kbytes 页数：11 Pages	CEL	CEL

更多UPG2253T6S-E2-A供应商更新时间2026-2-9 11:10:00