丝印：G5D；Package：TSON；GaAs HBT INTEGRATED CIRCUIT

FEATURES • Operation frequency : fopt = 2 400 to 2 500 MHz (2 450 MHz TYP.) • Supply voltage : VCC1, 2 = 2.7 to 3.6 V (3.0 V TYP.) • Control voltage : Vcont = 0 to 3.6 V (3.0 V TYP.) : Vbias + Venable = 0 to 3.1 V (3.0 V TYP.) • Circuit current : ICC = 65 mA TYP. @ VCC1, 2 = 3.0 V, Vbias + Ve

文件：252.44 Kbytes 页数：13 Pages

RENESAS

瑞萨

GaAs HBT INTEGRATED CIRCUIT

文件：1.25267 Mbytes 页数：7 Pages

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POWER AMPLIFIER FOR BluetoothTM Class 1

文件：292.73 Kbytes 页数：10 Pages

CEL

POWER AMPLIFIER FOR BluetoothTM Class 1

文件：533.91 Kbytes 页数：10 Pages

CEL

丝印：G5D；Package：TSON；GaAs HBT INTEGRATED CIRCUIT

FEATURES • Operation frequency : fopt = 2 400 to 2 500 MHz (2 450 MHz TYP.) • Supply voltage : VCC1, 2 = 2.7 to 3.6 V (3.0 V TYP.) • Control voltage : Vcont = 0 to 3.6 V (3.0 V TYP.) : Vbias + Venable = 0 to 3.1 V (3.0 V TYP.) • Circuit current : ICC = 65 mA TYP. @ VCC1, 2 = 3.0 V, Vbias + Ve

文件：252.44 Kbytes 页数：13 Pages

RENESAS

瑞萨

GaAs HBT INTEGRATED CIRCUIT

文件：1.25267 Mbytes 页数：7 Pages

CEL

POWER AMPLIFIER FOR BluetoothTM Class 1

文件：533.91 Kbytes 页数：10 Pages

CEL

POWER AMPLIFIER FOR BluetoothTM Class 1

文件：292.73 Kbytes 页数：10 Pages

CEL

Package：6-XFDFN 裸露焊盘；包装：卷带（TR） 类别：RF/IF，射频/中频和 RFID 射频放大器 描述：IC AMP BLUETOOTH 6-TSON

CEL