FDD8882

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=55A@TC=25℃ ·DrainSourceVoltage :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=11.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

FDD8882

N-ChannelPowerTrench짰MOSFET

FDD8882

N-ChannelPowerTrenchMOSFET

FDD8882_NL

N-ChannelPowerTrenchMOSFET

FDMC8882

N-ChannelPowerTrench짰MOSFET30V,16A,14.3m

FDS8882

N-ChannelPowerTrench짰MOSFET30V,9A,20.0m廓

GeneralDescription TheFDS8882hasbeendesignedtominimizelossesinpowerconversionapplication.AdvancementsinbothsiliconandpackagetechnologieshavebeencombinedtoofferthelowestrDS(on)whilemaintainingexcellentswitchingperformance. Features „MaxrDS(on)=20.0mΩat

FDU8882

N-ChannelPowerTrenchMOSFET

FDU8882

N-ChannelPowerTrench짰MOSFET

FDU8882_NL

N-ChannelPowerTrenchMOSFET

MAX8882

Dual,Low-Noise,Low-Dropout,160mALinearRegulatorsinSOT23