MOS INTEGRATED CIRCUIT

FEATURES • EMI noise reduction version (The overall peak level is reduced by 5 to 10 dB.) • Large on-chip ROM & RAM • External memory expansion space: 64 Kbytes • Minimum instruction execution time can be varied from high-speed (0.4 ms) to ultra-low-speed (122 ms) • I/O ports: 69 (N-ch open-d

文件：590.86 Kbytes 页数：78 Pages

RENESAS

瑞萨

MOS INTEGRATED CIRCUIT

FEATURES • EMI noise reduction version (The overall peak level is reduced by 5 to 10 dB.) • Large on-chip ROM & RAM • External memory expansion space: 64 Kbytes • Minimum instruction execution time can be varied from high-speed (0.4 ms) to ultra-low-speed (122 ms) • I/O ports: 69 (N-ch open-d

文件：605.25 Kbytes 页数：1997 Pages

RENESAS

瑞萨

MOS INTEGRATED CIRCUIT

FEATURES • Internal high-capacity ROM and RAM • External memory expansion space : 64 Kbytes • Minimum instruction execution time can be varied from high-speed (0.4 ms) to ultra-low-speed (122 ms) • I/O ports : 69 (N-ch open-drain : 4) • 8-bit resolution A/D converter: 8 channels • 8-bit reso

文件：578.75 Kbytes 页数：76 Pages

RENESAS

瑞萨

28 (19/40) AWG Tinned Copper

文件：408.07 Kbytes 页数：4 Pages

ALPHAWIRE