4-BIT SINGLE-CHIP MICROCOMPUTER

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

文件：587.77 Kbytes 页数：77 Pages

NEC

瑞萨

4-BIT SINGLE-CHIP MICROCOMPUTER

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

文件：587.77 Kbytes 页数：77 Pages

NEC

瑞萨

MOS INTEGRATED CIRCUIT

FEATURES · Ultra-low-voltage operation possible: VDD = 2.0 to 6.0 V • Can be driven by two 1.5-V manganese batteries. · On-chip memory • Program memory (ROM) : 16256 ´ 8 bits (mPD75316B) : 12160 ´ 8 bits (mPD75312B) • Data memory (RAM) : 1024 ´ 4 bits

文件：649.05 Kbytes 页数：79 Pages

RENESAS

瑞萨

4-BIT SINGLE-CHIP MICROCOMPUTER

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

文件：587.77 Kbytes 页数：77 Pages

NEC

瑞萨

MOS INTEGRATED CIRCUIT

FEATURES · Ultra-low-voltage operation possible: VDD = 2.0 to 6.0 V • Can be driven by two 1.5-V manganese batteries. · On-chip memory • Program memory (ROM) : 16256 ´ 8 bits (mPD75316B) : 12160 ´ 8 bits (mPD75312B) • Data memory (RAM) : 1024 ´ 4 bits

文件：649.05 Kbytes 页数：79 Pages

RENESAS

瑞萨