UPD75316BGC-XXX-3B9中文资料瑞萨数据手册PDF规格书

FEATURES

· Ultra-low-voltage operation possible: VDD = 2.0 to 6.0 V

• Can be driven by two 1.5-V manganese batteries.

· On-chip memory

• Program memory (ROM)

: 16256 ´ 8 bits (mPD75316B)

: 12160 ´ 8 bits (mPD75312B)

• Data memory (RAM)

: 1024 ´ 4 bits