UPD6P9M3MC-5A4-A中文资料瑞萨数据手册PDF规格书

厂商型号	UPD6P9M3MC-5A4-A
功能描述	MOS INTEGRATED CIRCUIT
文件大小	432.52 Kbytes
页面数量	45 页
生产厂商	Renesas Technology Corp
企业简称	RENESAS【瑞萨】
中文名称	瑞萨科技有限公司官网
原厂标识
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-5-19 11:27:00
人工找货	UPD6P9M3MC-5A4-A价格和库存，欢迎联系客服免费人工找货

FEATURES

• Program memory (one-time PROM): 4074 × 10 bits

• Data memory (RAM): 128 × 4 bits

• On-chip carrier generator for infrared remote control: The high-level and low-level width can be set separately

from 250 ns to 64 μs (@ fX = 4 MHz operation) via modulo

registers

• 9-bit programmable timer: 1 channel

• Instruction execution time: 16 μs (@ fX = 4 MHz) (μPD6P9M1)

8 μs (@ fX = 4 MHz) (μPD6P9M3)

• Stack level: 1 level (stack RAM is for data memory RF as well)

• I/O pins (KI/O): 8 units

• Input pins (KI): 4 units

• Sense input pins (S0, S2): 2 units

• S1/LED pin (I/O): 1 unit (when in output mode, this is the remote control

transmission display pin)

• Power supply voltage: VDD = 2.2 to 3.6 V

• Operating ambient temperature: TA = –40 to +85°C

• Oscillator frequency: fX = 3.5 to 4.5 MHz

• On-chip POC circuit and RAM retention detector

• Capacitor for oscillator: Not available