UPD6P4B中文资料瑞萨数据手册PDF规格书

FEATURES

• Program memory (one-time PROM) : 1002 ´ 10 bits

• Data memory (RAM) : 32 ´ 4 bits

• Built-in carrier generation circuit for infrared remote control

• 9-bit programmable timer : 1 channel

• Command execution time : 16 ms (when operating at fX = 4 MHz: ceramic oscillation)

• Stack level : 1 level (Stack RAM is for data memory RF as well.)

• I/O pins (KI/O) : 8 units

• Input pins (KI) : 4 units

• Sense input pin (S0) : 1 unit

• S1/LED pin (I/O) : 1 unit (In output mode, this is the remote control transmission display

pin.)

• Power supply voltage : VDD = 2.2 to 3.6 V (at fX = 4 MHz)

VDD = 2.7 to 3.6 V (at fX = 8 MHz)

• Operating ambient temperature : TA = –40 to +85°C

• Oscillator frequency : fX = 2.4 to 8 MHz

• POC circuit