4-BIT SINGLE-CHIP MICROCONTROLLER FOR INFRARED REMOTE CONTROL TRANSMISSION

DESCRIPTION The µPD64A and 65 feature low-voltage 2.0 V operation, and incorporate a carrier generator for infrared remote control transmission, a standby release function through key entry, and a programmable timer, making them ideal for infrared remote control transmitters. A one-time PROM pr

文件：399.15 Kbytes 页数：64 Pages

NEC

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3-MICROON CMOS GATE ARRAYS

Description The μD65000 (CMOS-2) series of gate arrays are low-power, high-speed devices featuring 3-micron silicon gate CMOS technology. The basic cell on the chip consists of four transistors, two P-channel and two N-channel, with double-layer metal Interconnects. Features

文件：658.41 Kbytes 页数：11 Pages

NEC

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UPD65000 (CMOS-3) SERIES 2-MICRON CMOS GATE ARRAYS

DESCRIPTION The μPD65000 (CMOS-3) series of gate arrays are low-power, high-speed devices featuring 2-micron silicon gate CMOS technology.

文件：515.73 Kbytes 页数：12 Pages

NEC

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UPD65000 (CMOS-3) SERIES 2-MICRON CMOS GATE ARRAYS

DESCRIPTION The μPD65000 (CMOS-3) series of gate arrays are low-power, high-speed devices featuring 2-micron silicon gate CMOS technology.

文件：515.73 Kbytes 页数：12 Pages

NEC

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3-MICROON CMOS GATE ARRAYS

Description The μD65000 (CMOS-2) series of gate arrays are low-power, high-speed devices featuring 3-micron silicon gate CMOS technology. The basic cell on the chip consists of four transistors, two P-channel and two N-channel, with double-layer metal Interconnects. Features

文件：658.41 Kbytes 页数：11 Pages

NEC

瑞萨

3-MICROON CMOS GATE ARRAYS

Description The μD65000 (CMOS-2) series of gate arrays are low-power, high-speed devices featuring 3-micron silicon gate CMOS technology. The basic cell on the chip consists of four transistors, two P-channel and two N-channel, with double-layer metal Interconnects. Features

文件：658.41 Kbytes 页数：11 Pages

NEC

瑞萨

UPD65000 (CMOS-3) SERIES 2-MICRON CMOS GATE ARRAYS

DESCRIPTION The μPD65000 (CMOS-3) series of gate arrays are low-power, high-speed devices featuring 2-micron silicon gate CMOS technology.

文件：515.73 Kbytes 页数：12 Pages

NEC

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C-MOS MULTI FUNCTION GATE

C-MOS MULTI FUNCTION GATE

文件：33.88 Kbytes 页数：2 Pages

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UPD65000 (CMOS-3) SERIES 2-MICRON CMOS GATE ARRAYS

DESCRIPTION The μPD65000 (CMOS-3) series of gate arrays are low-power, high-speed devices featuring 2-micron silicon gate CMOS technology.

文件：515.73 Kbytes 页数：12 Pages

NEC

瑞萨

UPD65000 (CMOS-3) SERIES 2-MICRON CMOS GATE ARRAYS

DESCRIPTION The μPD65000 (CMOS-3) series of gate arrays are low-power, high-speed devices featuring 2-micron silicon gate CMOS technology.

文件：515.73 Kbytes 页数：12 Pages

NEC

瑞萨