UPD65000 (CMOS-3) SERIES 2-MICRON CMOS GATE ARRAYS

DESCRIPTION The μPD65000 (CMOS-3) series of gate arrays are low-power, high-speed devices featuring 2-micron silicon gate CMOS technology.

文件：515.73 Kbytes 页数：12 Pages

NEC

瑞萨

650 V, 3 A ultrafast recovery rectifier

1. General description High power density, ultrafast switching time recovery rectifier with high-efficiency planar technology, encapsulated in a small and flat lead CFP5 (SOD128) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Reverse voltage VR ≤ 650 V • Forward c

文件：255.77 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

650 V, 3 A ultrafast recovery rectifier

1. General description High power density, ultrafast switching time recovery rectifier with high-efficiency planar technology, encapsulated in a small and flat lead CFP5 (SOD128) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Reverse voltage VR ≤ 650 V • Forward c

文件：255.72 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

POWER MANAGEMENT IC for USB-OTG

文件：2.01354 Mbytes 页数：29 Pages

TI

德州仪器