3-MICROON CMOS GATE ARRAYS

Description The μD65000 (CMOS-2) series of gate arrays are low-power, high-speed devices featuring 3-micron silicon gate CMOS technology. The basic cell on the chip consists of four transistors, two P-channel and two N-channel, with double-layer metal Interconnects. Features

文件：658.41 Kbytes 页数：11 Pages

NEC

瑞萨

UPD65000 (CMOS-3) SERIES 2-MICRON CMOS GATE ARRAYS

DESCRIPTION The μPD65000 (CMOS-3) series of gate arrays are low-power, high-speed devices featuring 2-micron silicon gate CMOS technology.

文件：515.73 Kbytes 页数：12 Pages

NEC

瑞萨

UPD65000 (CMOS-3) SERIES 2-MICRON CMOS GATE ARRAYS

Renesas

瑞萨

Managed Industrial 8-port Gigabit Ethernet Switch

文件：1.27709 Mbytes 页数：2 Pages

AXIOMTEK

艾讯科技

2.25 MHz Step Down Converter with Dual LDOs and SVS

文件：2.19357 Mbytes 页数：30 Pages

TI

德州仪器

2.25 MHz Step Down Converter with Dual LDOs and SVS

文件：2.21016 Mbytes 页数：34 Pages

TI

德州仪器