SiGe BiCMOS INTEGRATED CIRCUIT

FEATURES • Low voltage operation : VCC = 2.3 to 3.3 V (2.8 V TYP.) • Low mode control voltage : Vcont (H) = 1.0 V to VCC, Vcont (L) = 0 to 0.5 V • Low current consumption : ICC1 = 5.0 mA TYP. @ VCC = 2.8 V (LNA-mode) : ICC2 = 1 μA MAX. @ VCC = 2.8 V (Bypass-mode) • Low noise (LNA-mode) : NF1

文件：403.96 Kbytes 页数：22 Pages

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瑞萨

丝印：C3U；Package：TSON；SiGe BiCMOS INTEGRATED CIRCUIT

FEATURES • Low voltage operation : VCC = 2.3 to 3.3 V (2.8 V TYP.) • Low mode control voltage : Vcont (H) = 1.0 V to VCC, Vcont (L) = 0 to 0.5 V • Low current consumption : ICC1 = 5.0 mA TYP. @ VCC = 2.8 V (LNA-mode) : ICC2 = 1 μA MAX. @ VCC = 2.8 V (Bypass-mode) • Low noise (LNA-mode) : NF1

文件：403.96 Kbytes 页数：22 Pages

RENESAS

瑞萨

丝印：C3U；Package：TSON；SiGe BiCMOS INTEGRATED CIRCUIT

FEATURES • Low voltage operation : VCC = 2.3 to 3.3 V (2.8 V TYP.) • Low mode control voltage : Vcont (H) = 1.0 V to VCC, Vcont (L) = 0 to 0.5 V • Low current consumption : ICC1 = 5.0 mA TYP. @ VCC = 2.8 V (LNA-mode) : ICC2 = 1 μA MAX. @ VCC = 2.8 V (Bypass-mode) • Low noise (LNA-mode) : NF1

文件：403.96 Kbytes 页数：22 Pages

RENESAS

瑞萨

包装：盒 类别：开发板，套件，编程器 射频评估和开发套件，开发板 描述：EVAL BOARD UPD5740T6N

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