UPD5702TU-E2资料使用说明书库存现货瑞萨-114ic电子网

零件编号	下载订购	功能描述/丝印	制造商上传企业	LOGO
UPD5702TU-E2	文件：231.97 Kbytes Page：13 Pages	Marking：5702；Si LDMOSFET ANALOG RF INTEGRATED CIRCUIT FEATURES •OutputPower:Pout=+21dBmMIN.@Pin=−5dBm,f=1.9GHz,VDS=3.0V :Pout=+21dBmMIN.@Pin=+2dBm,f=2.45GHz,VDS=3.0V •SingleSupplyvoltage:VDS=3.0VTYP. •Packagedin8-pinLead-LessMinimold(2.0x2.2x0.5mm)suitableforhigh-densitysurfacemounting.	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
UPD5702TU-E2-A	文件：176.33 Kbytes Page：4 Pages	NECs 2.4 GHz Si LD MOS POWER AMPLIFIER 3VOPERATIONSILICONLDMOSFETRFPOWERAMPLIFIERINTEGRATEDCIRCUIT FOR1.9GHzPHSAND2.4GHzAPPLICATIONS DESCRIPTION TheµPD5702TUisasiliconlaterallydiffused(LD)MOSFETICdesignedforuseaspoweramplifier1.9GHzPHSand2.4GHzapplications.ThisICconsistsoftwostageamplifier	CEL California Eastern Labs	CEL
UPD5702TU-E2-A	文件：391.25 Kbytes Page：10 Pages	Si LDMOSFET ANALOG RF INTEGRATED CIRCUIT 3VOPERATIONSILICONLDMOSFETRFPOWERAMPLIFIERINTEGRATEDCIRCUIT FOR1.9GHzPHSAND2.4GHzAPPLICATIONS DESCRIPTION TheµPD5702TUisasiliconlaterallydiffused(LD)MOSFETICdesignedforuseaspoweramplifier1.9GHzPHSand2.4GHzapplications.ThisICconsistsoftwostageamplifier	CEL California Eastern Labs	CEL
UPD5702TU-E2-A	文件：100 bytes Page：1 Pages	Package：8-SMD，扁平引线裸焊盘；包装：散装类别：RF/IF，射频/中频和 RFID 射频放大器描述：IC AMP 802.15.1 2.4GHZ 8MINIMOLD	CEL California Eastern Labs	CEL

更多UPD5702TU-E2供应商更新时间2025-7-14 16:00:00