UPD5702TU-E2-A

NECs 2.4 GHz Si LD MOS POWER AMPLIFIER

3VOPERATIONSILICONLDMOSFETRFPOWERAMPLIFIERINTEGRATEDCIRCUIT FOR1.9GHzPHSAND2.4GHzAPPLICATIONS DESCRIPTION TheµPD5702TUisasiliconlaterallydiffused(LD)MOSFETICdesignedforuseaspoweramplifier1.9GHzPHSand2.4GHzapplications.ThisICconsistsoftwostageamplifier

UPD5702TU-E2-A

Si LDMOSFET ANALOG RF INTEGRATED CIRCUIT

3VOPERATIONSILICONLDMOSFETRFPOWERAMPLIFIERINTEGRATEDCIRCUIT FOR1.9GHzPHSAND2.4GHzAPPLICATIONS DESCRIPTION TheµPD5702TUisasiliconlaterallydiffused(LD)MOSFETICdesignedforuseaspoweramplifier1.9GHzPHSand2.4GHzapplications.ThisICconsistsoftwostageamplifier

UPD5702TU-E2-A

Package：8-SMD，扁平引线裸焊盘；包装：散装 类别：RF/IF，射频/中频和 RFID 射频放大器 描述：IC AMP 802.15.1 2.4GHZ 8MINIMOLD

UPD5702TU-E2

SiLDMOSFETANALOGRFINTEGRATEDCIRCUIT

FEATURES •OutputPower:Pout=+21dBmMIN.@Pin=−5dBm,f=1.9GHz,VDS=3.0V :Pout=+21dBmMIN.@Pin=+2dBm,f=2.45GHz,VDS=3.0V •SingleSupplyvoltage:VDS=3.0VTYP. •Packagedin8-pinLead-LessMinimold(2.0x2.2x0.5mm)suitableforhigh-densitysurfacemounting.