UPD48288236A数据表ic资料批发采购瑞萨-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
UPD48288236A	文件：1.10465 Mbytes Page：53 Pages	288M-BIT Low Laten cy DRAM Common I/O Features • SRAM-type interface • Double-data-rate architecture • PLL circuitry • Cycle time: 1.875 ns @ tRC = 15 ns 2.5 ns @ tRC = 15 ns 2.5 ns @ tRC = 20 ns 3.3 ns @ tRC = 20 ns • Non-multiplexed addresses • Multiplexing option is available. • Data mask for WRITE commands • Differentia 文件：1.10465 Mbytes 页数：53 Pages	RENESAS 瑞萨	RENESAS
UPD48288236AFF-E18-DW1	文件：1.10465 Mbytes Page：53 Pages	288M-BIT Low Laten cy DRAM Common I/O Features • SRAM-type interface • Double-data-rate architecture • PLL circuitry • Cycle time: 1.875 ns @ tRC = 15 ns 2.5 ns @ tRC = 15 ns 2.5 ns @ tRC = 20 ns 3.3 ns @ tRC = 20 ns • Non-multiplexed addresses • Multiplexing option is available. • Data mask for WRITE commands • Differentia 文件：1.10465 Mbytes 页数：53 Pages	RENESAS 瑞萨	RENESAS
UPD48288236AFF-E18-DW1-A	文件：1.10465 Mbytes Page：53 Pages	288M-BIT Low Laten cy DRAM Common I/O Features • SRAM-type interface • Double-data-rate architecture • PLL circuitry • Cycle time: 1.875 ns @ tRC = 15 ns 2.5 ns @ tRC = 15 ns 2.5 ns @ tRC = 20 ns 3.3 ns @ tRC = 20 ns • Non-multiplexed addresses • Multiplexing option is available. • Data mask for WRITE commands • Differentia 文件：1.10465 Mbytes 页数：53 Pages	RENESAS 瑞萨	RENESAS
UPD48288236AFF-E24-DW1	文件：1.10465 Mbytes Page：53 Pages	288M-BIT Low Laten cy DRAM Common I/O Features • SRAM-type interface • Double-data-rate architecture • PLL circuitry • Cycle time: 1.875 ns @ tRC = 15 ns 2.5 ns @ tRC = 15 ns 2.5 ns @ tRC = 20 ns 3.3 ns @ tRC = 20 ns • Non-multiplexed addresses • Multiplexing option is available. • Data mask for WRITE commands • Differentia 文件：1.10465 Mbytes 页数：53 Pages	RENESAS 瑞萨	RENESAS
UPD48288236AFF-E24-DW1-A	文件：1.10465 Mbytes Page：53 Pages	288M-BIT Low Laten cy DRAM Common I/O Features • SRAM-type interface • Double-data-rate architecture • PLL circuitry • Cycle time: 1.875 ns @ tRC = 15 ns 2.5 ns @ tRC = 15 ns 2.5 ns @ tRC = 20 ns 3.3 ns @ tRC = 20 ns • Non-multiplexed addresses • Multiplexing option is available. • Data mask for WRITE commands • Differentia 文件：1.10465 Mbytes 页数：53 Pages	RENESAS 瑞萨	RENESAS
UPD48288236AFF-E25-DW1	文件：1.10465 Mbytes Page：53 Pages	288M-BIT Low Laten cy DRAM Common I/O Features • SRAM-type interface • Double-data-rate architecture • PLL circuitry • Cycle time: 1.875 ns @ tRC = 15 ns 2.5 ns @ tRC = 15 ns 2.5 ns @ tRC = 20 ns 3.3 ns @ tRC = 20 ns • Non-multiplexed addresses • Multiplexing option is available. • Data mask for WRITE commands • Differentia 文件：1.10465 Mbytes 页数：53 Pages	RENESAS 瑞萨	RENESAS
UPD48288236AFF-E25-DW1-A	文件：1.10465 Mbytes Page：53 Pages	288M-BIT Low Laten cy DRAM Common I/O Features • SRAM-type interface • Double-data-rate architecture • PLL circuitry • Cycle time: 1.875 ns @ tRC = 15 ns 2.5 ns @ tRC = 15 ns 2.5 ns @ tRC = 20 ns 3.3 ns @ tRC = 20 ns • Non-multiplexed addresses • Multiplexing option is available. • Data mask for WRITE commands • Differentia 文件：1.10465 Mbytes 页数：53 Pages	RENESAS 瑞萨	RENESAS
UPD48288236AFF-E33-DW1	文件：1.10465 Mbytes Page：53 Pages	288M-BIT Low Laten cy DRAM Common I/O Features • SRAM-type interface • Double-data-rate architecture • PLL circuitry • Cycle time: 1.875 ns @ tRC = 15 ns 2.5 ns @ tRC = 15 ns 2.5 ns @ tRC = 20 ns 3.3 ns @ tRC = 20 ns • Non-multiplexed addresses • Multiplexing option is available. • Data mask for WRITE commands • Differentia 文件：1.10465 Mbytes 页数：53 Pages	RENESAS 瑞萨	RENESAS
UPD48288236AFF-E33-DW1-A	文件：1.10465 Mbytes Page：53 Pages	288M-BIT Low Laten cy DRAM Common I/O Features • SRAM-type interface • Double-data-rate architecture • PLL circuitry • Cycle time: 1.875 ns @ tRC = 15 ns 2.5 ns @ tRC = 15 ns 2.5 ns @ tRC = 20 ns 3.3 ns @ tRC = 20 ns • Non-multiplexed addresses • Multiplexing option is available. • Data mask for WRITE commands • Differentia 文件：1.10465 Mbytes 页数：53 Pages	RENESAS 瑞萨	RENESAS
UPD48288236AF1-E18-DW1-A	文件：1.22006 Mbytes Page：54 Pages	288M-BIT Low Latency DRAM 文件：1.22006 Mbytes 页数：54 Pages	RENESAS 瑞萨	RENESAS

技术参数

Supply voltage (V)：
1.8
Density (Mbits)：
288
Architecture：
Low Latency DRAM-II
Function：
Common I/O
Burst Length (words)：
2/4
Data Width (bits)：
36
MAX Frequency (MHz)：
533
MIN Frequency (MHz)：
175
tRC (ns)：
15
Operation Temp (degC)：
Tc=-0 to 95
I/O Voltage (V)：
1.5/1.8
Production Status：
Mass Production

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市卓越微芯电子有限公司	UPD48288236AFF-E33-DW1	RENESAS	25+	BGA	1553	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市华来深电子有限公司	UPD48288236AF1-E24-DW1	RENESAS	23+	BGA	8560	受权代理!全新原装现货特价热卖!	询价
深圳市华斯顿科技有限公司	UPD48288236AFF-E33-DW1	RENESAS	25+23+	BGA	22615	绝对原装正品全新进口深圳现货	询价
深圳市湘达电子有限公司	UPD48288236AF1-E24Y-DW1-E2-A	RENESAS/瑞萨	20+	BGA	2800	绝对全新原装现货,欢迎来电查询	询价
深圳市拓亿芯电子有限公司	UPD48288236AFF-EF26-DW1-A	RENESAS/瑞萨	23+	BGA	15000	一级代理原装现货	询价
深圳市凌旭科技有限公司	UPD48288236AFF-E24Y-DW1-E2-A	RENESAS	21+	BGA	1585	只做原装正品,不止网上数量,欢迎电话微信查询!	询价
深圳市冠亿通科技有限公司	UPD48288236AF1-E24Y-DW1-E2-A	RENESAS/瑞萨	25+		25000	原厂原包深圳现货主打品牌假一赔百可开票!	询价
深圳市宇创芯科技有限公司	UPD48288236AF1-E24Y-DW1-E2-A	RENESAS/瑞萨	24+	BGA	9600	原装现货,优势供应,支持实单!	询价
深圳市星佑电子有限公司	UPD48288236AF1-E24Y-DW1-E2-A	RENESAS/瑞萨	21+	BGA	10000	全新原装公司现货价格优	询价
深圳市威尔健半导体有限公司	UPD48288236AFF-E33-DW1-A	RENESAS/瑞萨	23+	BGA	50000	全新原装正品现货,支持订货	询价

更多UPD48288236A供应商更新时间2025-10-6 13:58:00

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