MOS INTEGRATED CIRCUIT

Features • 131,072 words by 16 bits organization • Fast access time : 70 ns (MAX.) • Byte data control : /LB (I/O1 to I/O8), /UB (I/O9 to I/O16) • Low voltage operation : VCC = 2.7 to 3.6 V (-BB70X) • Low VCC data retention : 1.0 V (MIN.) • Operating ambient temperature : TA = –25 to +85 °C

文件：771.01 Kbytes 页数：26 Pages

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丝印：B2；Package：FBGA；MOS INTEGRATED CIRCUIT

Features • 131,072 words by 16 bits organization • Fast access time : 70 ns (MAX.) • Byte data control : /LB (I/O1 to I/O8), /UB (I/O9 to I/O16) • Low voltage operation : VCC = 2.7 to 3.6 V (-BB70X) • Low VCC data retention : 1.0 V (MIN.) • Operating ambient temperature : TA = –25 to +85 °C

文件：771.01 Kbytes 页数：26 Pages

RENESAS

瑞萨

MOS INTEGRATED CIRCUIT

Features • 131,072 words by 16 bits organization • Fast access time : 70 ns (MAX.) • Byte data control : /LB (I/O1 to I/O8), /UB (I/O9 to I/O16) • Low voltage operation : VCC = 2.7 to 3.6 V (-BB70X) • Low VCC data retention : 1.0 V (MIN.) • Operating ambient temperature : TA = –25 to +85 °C

文件：771.01 Kbytes 页数：26 Pages

RENESAS

瑞萨

2M-BIT CMOS STATIC RAM 128K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION

文件：281.56 Kbytes 页数：24 Pages

NEC

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2M-BIT CMOS STATIC RAM 128K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION

文件：281.56 Kbytes 页数：24 Pages

NEC

瑞萨

2M-BIT CMOS STATIC RAM 128K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION

文件：281.56 Kbytes 页数：24 Pages

NEC

瑞萨

2M-BIT CMOS STATIC RAM 128K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION

文件：281.56 Kbytes 页数：24 Pages

NEC

瑞萨

2M-BIT CMOS STATIC RAM 128K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION

文件：281.56 Kbytes 页数：24 Pages

NEC

瑞萨

2M-BIT CMOS STATIC RAM 128K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION

Renesas

瑞萨