UPD442002-X规格书应用电路供应代理瑞萨-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
UPD442002-X	文件：771.01 Kbytes Page：26 Pages	MOS INTEGRATED CIRCUIT Features • 131,072 words by 16 bits organization • Fast access time : 70 ns (MAX.) • Byte data control : /LB (I/O1 to I/O8), /UB (I/O9 to I/O16) • Low voltage operation : VCC = 2.7 to 3.6 V (-BB70X) • Low VCC data retention : 1.0 V (MIN.) • Operating ambient temperature : TA = –25 to +85 °C 文件：771.01 Kbytes 页数：26 Pages	RENESAS 瑞萨	RENESAS
UPD442002-X	文件：281.56 Kbytes Page：24 Pages	2M-BIT CMOS STATIC RAM 128K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION 文件：281.56 Kbytes 页数：24 Pages	NEC 瑞萨	NEC
UPD442002-X	文件：300 bytes Page：1 Pages	2M-BIT CMOS STATIC RAM 128K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION	Renesas 瑞萨	Renesas
UPD442002	文件：771.01 Kbytes Page：26 Pages	MOS INTEGRATED CIRCUIT Features • 131,072 words by 16 bits organization • Fast access time : 70 ns (MAX.) • Byte data control : /LB (I/O1 to I/O8), /UB (I/O9 to I/O16) • Low voltage operation : VCC = 2.7 to 3.6 V (-BB70X) • Low VCC data retention : 1.0 V (MIN.) • Operating ambient temperature : TA = –25 to +85 °C 文件：771.01 Kbytes 页数：26 Pages	RENESAS 瑞萨	RENESAS

更多UPD442002-X供应商更新时间2025-11-26 16:00:00