MOS INTEGRATED CIRCUIT

Features • 131,072 words by 8 bits organization • Fast access time: 70, 85, 100, 120, 150 ns (MAX.) • Low voltage operation (A version: VCC = 3.0 to 5.5 V, B version: VCC = 2.7 to 5.5 V) • Operating ambient temperature: TA = –25 to +85 °C • Low VCC data retention: 2.0 V (MIN.) • Output Enabl

文件：772.11 Kbytes 页数：26 Pages

RENESAS

瑞萨

1M-BIT CMOS STATIC RAM 128K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION

文件：211.06 Kbytes 页数：28 Pages

NEC

瑞萨

MOS INTEGRATED CIRCUIT

Features • 131,072 words by 8 bits organization • Fast access time: 70, 85, 100, 120, 150 ns (MAX.) • Low voltage operation (A version: VCC = 3.0 to 5.5 V, B version: VCC = 2.7 to 5.5 V) • Operating ambient temperature: TA = 0 to 70 °C • Low VCC data retention: 2.0 V (MIN.) • Output Enable i

文件：892.69 Kbytes 页数：30 Pages

RENESAS

瑞萨

MOS INTEGRATED CIRCUIT

Features • 131,072 words by 8 bits organization • Fast access time: 70, 85, 100, 120, 150 ns (MAX.) • Low voltage operation (A version: VCC = 3.0 to 5.5 V, B version: VCC = 2.7 to 5.5 V) • Operating ambient temperature: TA = 0 to 70 °C • Low VCC data retention: 2.0 V (MIN.) • Output Enable i

文件：892.69 Kbytes 页数：30 Pages

RENESAS

瑞萨

MOS INTEGRATED CIRCUIT

Features • 131,072 words by 8 bits organization • Fast access time: 70, 85, 100, 120, 150 ns (MAX.) • Low voltage operation (A version: VCC = 3.0 to 5.5 V, B version: VCC = 2.7 to 5.5 V) • Operating ambient temperature: TA = –25 to +85 °C • Low VCC data retention: 2.0 V (MIN.) • Output Enabl

文件：772.11 Kbytes 页数：26 Pages

RENESAS

瑞萨

1M-BIT CMOS STATIC RAM 128K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION

Renesas

瑞萨