MONOLITHIC DUAL H BRIDGE DRIVER CIRCUIT

DESCRIPTION The µPD16813 is a monolithic dual H bridge driver circuit which uses power MOS FETs in its driver stage. By complementing the P channel and N channel of the output stage, the circuit current has been substantially inproved as compared with that of conventional charge pump drivers. Th

文件：68.05 Kbytes 页数：8 Pages

NEC

瑞萨

MOS INTEGRATED CIRCUIT

FEATURES • Low ON resistance (sum of ON resistors of top and bottom transistors) RON = 2.0 W TYP. • Low current consumption: IDD = 100 mA MAX. • Noise reduction circuit that operates when INC is OFF. • Compact surface mount package: 16-pin plastic SOP (300 mil)

文件：243.59 Kbytes 页数：10 Pages

RENESAS

瑞萨

MONOLITHIC DUAL H BRIDGE DRIVER CIRCUIT

Renesas

瑞萨

MOS INTEGRATED CIRCUIT

FEATURES • Low ON resistance (sum of ON resistors of top and bottom transistors) RON = 2.0 W TYP. • Low current consumption: IDD = 100 mA MAX. • Noise reduction circuit that operates when INC is OFF. • Compact surface mount package: 16-pin plastic SOP (300 mil)

文件：243.59 Kbytes 页数：10 Pages

RENESAS

瑞萨

MONOLITHIC DUAL H BRIDGE DRIVER CIRCUIT

DESCRIPTION The µPD16813 is a monolithic dual H bridge driver circuit which uses power MOS FETs in its driver stage. By complementing the P channel and N channel of the output stage, the circuit current has been substantially inproved as compared with that of conventional charge pump drivers. Th

文件：68.05 Kbytes 页数：8 Pages

NEC

瑞萨