MOS INTEGRATED CIRCUIT

FEATURES • High temperature operation (Tch = 175°C MAX.) • Built-in charge pump circuit • Low on-state resistance RDS(on) = 100 mΩ MAX. (VIN = VIH, IO = 1.5 A, Tch = 25°C) • Built-in protection circuit - Current limitation - Over temperature protection • Built-in open load detection circui

文件：414.61 Kbytes 页数：17 Pages

RENESAS

瑞萨

MOS INTEGRATED CIRCUIT

FEATURES • High temperature operation (Tch = 175°C MAX.) • Built-in charge pump circuit • Low on-state resistance RDS(on) = 100 mΩ MAX. (VIN = VIH, IO = 1.5 A, Tch = 25°C) • Built-in protection circuit - Current limitation - Over temperature protection • Built-in open load detection circui

文件：414.61 Kbytes 页数：17 Pages

RENESAS

瑞萨

MOS INTEGRATED CIRCUIT

FEATURES • High temperature operation (Tch = 175°C MAX.) • Built-in charge pump circuit • Low on-state resistance RDS(on) = 100 mΩ MAX. (VIN = VIH, IO = 1.5 A, Tch = 25°C) • Built-in protection circuit - Current limitation - Over temperature protection • Built-in open load detection circui

文件：414.61 Kbytes 页数：17 Pages

RENESAS

瑞萨

RENESAS
QFP

RENESAS

瑞萨

上传：深圳市正纳电子有限公司

RENESAS
QFP

RENESAS

瑞萨

上传：深圳市正纳电子有限公司