MOS INTEGRATED CIRCUIT

FEATURES • High voltage full CMOS process • High breakdown voltage, high current output (Maximum rating: 120 V, +400 mA, −150 mA) • 64-bit bi-directional shift register on chip • Data control by transfer clock (external) and latch • High-speed data transfer capability (fCLK = 12 MHz MAX.: whe

文件：266.06 Kbytes 页数：18 Pages

RENESAS

瑞萨

64-BIT AC-PDP DRIVER

文件：96.15 Kbytes 页数：16 Pages

NEC

瑞萨

64-BIT AC-PDP DRIVER

Renesas

瑞萨

MOS INTEGRATED CIRCUIT

FEATURES • High voltage full CMOS process • High breakdown voltage, high current output (Maximum rating: 120 V, +400 mA, −150 mA) • 64-bit bi-directional shift register on chip • Data control by transfer clock (external) and latch • High-speed data transfer capability (fCLK = 12 MHz MAX.: whe

文件：266.06 Kbytes 页数：18 Pages

RENESAS

瑞萨