UPD166100GR资料datasheet下载批发供应瑞萨-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
UPD166100GR	文件：399.66 Kbytes Page：11 Pages	N-CHANNEL LOW SIDE INTELLIGENT POWER DEVICE 文件：399.66 Kbytes 页数：11 Pages	NEC 瑞萨	NEC
UPD166100GR-E1-AZ	文件：296.97 Kbytes Page：14 Pages	MOS INTEGRATED CIRCUIT FEATURES Built in current limit and thermal shutdown circuit. Thermal shutdown will automatically restart after the channel temperature has cool down. Low on-state resistance: RDS(ON) = 160 mΩ (VIN = 5 V, IOUT = 0.8 A, Tch = 25°C) Built in dynamic clamp circuit uPD166101: Dual channel Low-s 文件：296.97 Kbytes 页数：14 Pages	RENESAS 瑞萨	RENESAS
UPD166100GR-E2-AZ	文件：296.97 Kbytes Page：14 Pages	MOS INTEGRATED CIRCUIT FEATURES Built in current limit and thermal shutdown circuit. Thermal shutdown will automatically restart after the channel temperature has cool down. Low on-state resistance: RDS(ON) = 160 mΩ (VIN = 5 V, IOUT = 0.8 A, Tch = 25°C) Built in dynamic clamp circuit uPD166101: Dual channel Low-s 文件：296.97 Kbytes 页数：14 Pages	RENESAS 瑞萨	RENESAS
UPD166100GR20	文件：399.66 Kbytes Page：11 Pages	N-CHANNEL LOW SIDE INTELLIGENT POWER DEVICE 文件：399.66 Kbytes 页数：11 Pages	NEC 瑞萨	NEC
UPD166100GR	文件：300 bytes Page：1 Pages	Intelligent Power Devices	Renesas 瑞萨	Renesas

更多UPD166100GR供应商更新时间2025-11-30 16:01:00