UPD166101GR技术资料参数供应价格瑞萨NEC-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
UPD166101GR	文件：399.66 Kbytes Page：11 Pages	N-CHANNEL LOW SIDE INTELLIGENT POWER DEVICE 文件：399.66 Kbytes 页数：11 Pages	NEC 瑞萨	NEC
UPD166101GR-E1-AZ	文件：296.97 Kbytes Page：14 Pages	MOS INTEGRATED CIRCUIT FEATURES Built in current limit and thermal shutdown circuit. Thermal shutdown will automatically restart after the channel temperature has cool down. Low on-state resistance: RDS(ON) = 160 mΩ (VIN = 5 V, IOUT = 0.8 A, Tch = 25°C) Built in dynamic clamp circuit uPD166101: Dual channel Low-s 文件：296.97 Kbytes 页数：14 Pages	RENESAS 瑞萨	RENESAS
UPD166101GR-E2-AZ	文件：296.97 Kbytes Page：14 Pages	MOS INTEGRATED CIRCUIT FEATURES Built in current limit and thermal shutdown circuit. Thermal shutdown will automatically restart after the channel temperature has cool down. Low on-state resistance: RDS(ON) = 160 mΩ (VIN = 5 V, IOUT = 0.8 A, Tch = 25°C) Built in dynamic clamp circuit uPD166101: Dual channel Low-s 文件：296.97 Kbytes 页数：14 Pages	RENESAS 瑞萨	RENESAS
UPD166101GR20	文件：399.66 Kbytes Page：11 Pages	N-CHANNEL LOW SIDE INTELLIGENT POWER DEVICE 文件：399.66 Kbytes 页数：11 Pages	NEC 瑞萨	NEC
UPD166101GR	文件：300 bytes Page：1 Pages	Intelligent Power Devices	Renesas 瑞萨	Renesas
UPD166101GR-E1-AZ	文件：100 bytes Page：1 Pages	包装：托盘类别：集成电路（IC）微控制器描述：IC MCU	Renesas Electronics America Inc	Renesas Electronics America Inc

更多UPD166101GR供应商更新时间2025-10-9 16:01:00