UPA2723UT1A-E1-AY资料使用说明书原装现货-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
UPA2723UT1A-E1-AY	文件：349.97 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The μ PA2723UT1A is N-channel MOSFET designed for low side device of synchronous rectifier DC/DC converter. FEATURES • Low on-state resistance RDS(on)1 = 2.5 mΩ MAX. (VGS = 10 V, ID = 17 A) RDS(on)2 = 3.5 mΩ MAX. (VGS = 4.5 V, ID = 17 A) • Thin type surface mount package with he 文件：349.97 Kbytes 页数：8 Pages	RENESAS 瑞萨	RENESAS
UPA2723UT1A-E1-AZ	文件：349.97 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The μ PA2723UT1A is N-channel MOSFET designed for low side device of synchronous rectifier DC/DC converter. FEATURES • Low on-state resistance RDS(on)1 = 2.5 mΩ MAX. (VGS = 10 V, ID = 17 A) RDS(on)2 = 3.5 mΩ MAX. (VGS = 4.5 V, ID = 17 A) • Thin type surface mount package with he 文件：349.97 Kbytes 页数：8 Pages	RENESAS 瑞萨	RENESAS
UPA2754GR	文件：0 bytes Page：0 Pages	RENESAS SOP8	RENESAS 瑞萨上传：深圳市正纳电子有限公司	RENESAS
UPA2755GR	文件：0 bytes Page：0 Pages	RENESAS SOP8	RENESAS 瑞萨上传：深圳市正纳电子有限公司	RENESAS
UPA2790GR	文件：0 bytes Page：0 Pages	RENESAS SOP8	RENESAS 瑞萨上传：深圳市正纳电子有限公司	RENESAS

更多UPA2723UT1A-E1-AY供应商更新时间2025-10-9 10:20:00