UPA2723UT1A-E1-AZ规格书贸易商瑞萨RENESAS-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
UPA2723UT1A-E1-AZ	文件：349.97 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The μ PA2723UT1A is N-channel MOSFET designed for low side device of synchronous rectifier DC/DC converter. FEATURES • Low on-state resistance RDS(on)1 = 2.5 mΩ MAX. (VGS = 10 V, ID = 17 A) RDS(on)2 = 3.5 mΩ MAX. (VGS = 4.5 V, ID = 17 A) • Thin type surface mount package with he 文件：349.97 Kbytes 页数：8 Pages	RENESAS 瑞萨	RENESAS
UPA2723UT1A-E1-AY	文件：349.97 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The μ PA2723UT1A is N-channel MOSFET designed for low side device of synchronous rectifier DC/DC converter. FEATURES • Low on-state resistance RDS(on)1 = 2.5 mΩ MAX. (VGS = 10 V, ID = 17 A) RDS(on)2 = 3.5 mΩ MAX. (VGS = 4.5 V, ID = 17 A) • Thin type surface mount package with he 文件：349.97 Kbytes 页数：8 Pages	RENESAS 瑞萨	RENESAS
UPA2727UT1A-E1-AY	文件：0 bytes Page：0 Pages	TDSN-8	RENESAS/瑞萨上传：深圳市中飞凌科技有限公司	RENESAS/瑞萨
UPA2754GR	文件：0 bytes Page：0 Pages	SOP8	RENESAS 瑞萨上传：深圳市正纳电子有限公司	RENESAS
UPA2755GR	文件：0 bytes Page：0 Pages	SOP8	RENESAS 瑞萨上传：深圳市正纳电子有限公司	RENESAS

更多UPA2723UT1A-E1-AZ供应商更新时间2025-12-12 11:00:00