MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μ PA2520 is N-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipments. FEATURES • Low on-state resistance RDS(on)1 = 13.2 mΩ MAX. (VGS = 10 V, ID = 10 A) RDS(on)2 = 17 mΩ MAX. (VGS = 4.5 V, ID = 5.0 A) • Buil

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Ultra Low phase noise VCO with built-in buffer amplifier

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Low voltage, Low power, 짹1 High detect accuracy CMOS Voltage Detector

GENERAL DESCRIPTIONS The VDA series are voltage detectors with low voltage, low power consumption and high accuracy. The accuracy of the detection voltage is detected based on a voltage reference of high accuracy that the temperature coefficient is controlled. The detection voltage is made in

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ANASEMAnaSem Hong Kong Limited.

安纳森半导体安纳森半导体香港有限公司