丝印：G9；Package：SOT-353；Emitter common (dual digital transistors)

Features 1) Built-In Biasing Resistors, R1 = R2 = 10kW. 2) Two DTC114E chips in one package. 3) Emitter(GND)-common type. 4) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit). 5) The bias resistors

文件：76.33 Kbytes 页数：2 Pages

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丝印：G9；Package：SOT-353；NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)

Features 1) Built-In Biasing Resistors, R1 = R2 = 10kW. 2) Two DTC114E chips in one package. 3) Emitter(GND)-common type. 4) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit). 5) The bias resistors

文件：463.57 Kbytes 页数：8 Pages

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EMG9 / UMG9N / FMG9A NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)

Features 1) Built-In Biasing Resistors, R1 = R2 = 10kW. 2) Two DTC114E chips in one package. 3) Emitter(GND)-common type. 4) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit). 5) The bias resistors

文件：463.57 Kbytes 页数：8 Pages

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丝印：G9；Package：SOT-353；Emitter common (dual digital transistors)

文件：1.29916 Mbytes 页数：11 Pages

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Complex Transistor(DTR+DTR)

在超小型封装中内藏2个晶体管。适用于从差动增幅回路到高频水晶振动器，起动器等各种用途。 •分圧型超小型复合三极管;

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