快恢复桥式整流器

Jingdao

晶导

整流桥

ASEMI

强元芯电子

P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

DESCRIPTION The µPA610TA is a switching device which can be driven directly by a 2.5 V power source. The µPA610TA has excellent switching characteristics, and is suitable for use as a high-speed switching device in digital circuits. FEATURES • Can be driven by a 2.5 V power source.

文件：64.18 Kbytes 页数：8 Pages

NEC

瑞萨

SINGLE CHANNEL HIGH SIDE SOLID STATE RELAY

DESCRIPTION The VN610SP is a monolithic device made using STMicroelectronics VIPower M0-3 technology. It is intended for driving resistive or inductive loads with one side connected to ground. Active VCC pin voltage clamp protects the device against low energy spikes (see ISO7637 transient compat

文件：72.81 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

SINGLE CHANNEL HIGH SIDE SOLID STATE RELAY

DESCRIPTION The VN610SP is a monolithic device made using STMicroelectronics VIPower M0-3 technology. It is intended for driving resistive or inductive loads with one side connected to ground. Active VCC pin voltage clamp protects the device against low energy spikes (see ISO7637 transient compat

文件：72.81 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体