UJ4SC075018L8S数据手册Qorvo中文资料规格书

描述 Description

Qorvo's UJ4SC075018L8S is a 750 V, 18 mohm Gen 4 SiC FET. It is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device's standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when replacing Si IGBTs, Si superjunction devices or SiC MOSFETs. Available in the space-saving MO-229 package which enables automated assembly, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.

特性 Features

• On-resistance RDS(on): 18 mohm (typ)
• Operating temperature: 175°C (max)
• Excellent reverse recovery: Qrr = 128nC
• Low body diode VFSD: 1.14V
• Low gate charge: QG = 37.8nC
• Threshold voltage VG(th): 4.8V (typ) allowing 0 to 15V drive
• Low intrinsic capacitance
• ESD protected, HBM class 2
• MO-229 package for faster switching, clean gate waveforms

应用 Application

• Solid State Relays and Circuit-Breakers
• Line Rectification and Active-Bridge Rectification Circuits in AC/DC Front-Ends
• EV Charging
• PV Inverters
• Switched-Mode Power Supplies
• Power Factor Correction Modules
• Motor Drives
• Induction Heating