UJ4SC075018B7S数据手册Qorvo中文资料规格书

描述 Description

Qorvo's UJ4SC075018B7S is a 750 V, 18 mohm Gen 4 SiC FET. It is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device's standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when replacing Si IGBTs, Si superjunction devices or SiC MOSFETs. Available in the D2PAK-7L package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.
AEC-Q101 qualified.

特性 Features

• On-resistance (RDS(on)): 18 mohm (typ)
• Maximum operating temperature: 175 °C
• Excellent reverse recovery: Qrr = 125 nC
• Low body diode VFSD: 1.14 V
• Low gate charge: QG = 37.8 nC
• Threshold voltage VG(th): 4.8 V (typ) allowing 0 to 15 V drive

应用 Application

• EV Charging
• PV Inverters
• Switched-Mode Power Supplies
• Power Factor Correction Modules
• Motor Drives
• Induction Heating