UJ4SC075010L8S数据手册Qorvo中文资料规格书

描述 Description

The UJ4SC075010L8S is a 750V, 10.7 mohm G4 SiC FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when replacing Si IGBTs, Si superjunction devices or SiC MOSFETs. Available in the space-saving MO-229 package which enables automated assembly, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.

特性 Features

• FOn Resistance RDS(on): 10.7 mohm (typ)
• Operating temperature: 175C (max)
• Excellent reverse recovery: Qrr = 274nC
• Low body diode VFSD: 1.1V
• Low gate charge: QG = 75nC
• Threshold voltage VG(th): 4.5V (typ) allowing 0 to 15V drive
• Low intrinsic capacitance
• ESD Protected: HBM Class 2
• MO-229 package for faster switching, clean gate waveforms

应用 Application

• Server and Telecom power supplies
• Switch mode power supplies
• DC-DC converter circuits
• EV Charging
• PV Inverters