Silicon Carbide (SiC) Cascode JFET - EliteSiC, 9 mohm, 750V, D2PAK-7L

EliteSiC Cascode JFETs combine a normally-on SiC JFET with a Si MOSFET to create a normally-off device in a cascode circuit configuration, offering superior switching performance and reliability. Benefits include high efficiency, faster frequency, increased power density, reduced EMI, and smaller sy

ONSEMI

安森美半导体

750 V, 9 mohm SiC FET

Qorvo's UJ4SC075009B7S is a 750 V, 9 mohm Gen 4 SiC FET. It is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device's standard gate-drive characteristics allows use of off-the-shelf gate • On-resistance (RDS(on)): 9 mohm (typ)\n• Maximum operating temperature: 175 °C\n• Excellent reverse recovery: Qrr = 338 nC\n• Low body diode VFSD: 1.1 V\n• Low gate charge: QG = 75 nC\n• Threshold voltage VG(th): 4.5 V (typ) allowing 0 to 15 V drive;

Qorvo

威讯联合

750V-9mW SiC FET

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UNITEDSIC

UnitedSiC.

TSSOP-32

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上传：深圳庞田科技有限公司

HVSON-14

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上传：天津市博通航睿技术有限公司