Silicon Carbide (SiC) Cascode JFET - EliteSiC, 18 mohm, 750V, TO-247-4L

EliteSiC Cascode JFETs combine a normally-on SiC JFET with a Si MOSFET to create a normally-off device in a cascode circuit configuration, offering superior switching performance and reliability. Benefits include high efficiency, faster frequency, increased power density, reduced EMI, and smaller sy

ONSEMI

安森美半导体

750 V, 18 mohm SiC FET

Qorvo's UJ4C075018K4S is a 750 V, 18 mohm Gen 4 SiC FET. It is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device's standard gate-drive characteristics allows use of off-the-shelf gate • On-resistance (RDS(on)): 18 mohm (typ)\n• Maximum operating temperature: 175 °C\n• Excellent reverse recovery: Qrr = 102 nC\n• Low body diode VFSD: 1.14 V\n• Low gate charge: QG = 37.8 nC\n• Threshold voltage VG(th): 4.8 V (typ) allowing 0 to 15 V drive;

Qorvo

威讯联合

丝印：UJ4C075018K4S；Package：TO-247-4L；750V-18mW SiC FET

文件：632.42 Kbytes 页数：14 Pages

UNITEDSIC

UnitedSiC.

TSSOP-32

恩XP

上传：深圳庞田科技有限公司

HVSON-14

恩XP

上传：天津市博通航睿技术有限公司